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Alpha & Omega Semiconductor Inc.TO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

AOB15S65L

MOSFET N-CH 650V 15A TO263

Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

aMOS™

Status

Not For New Designs

$1.84 / unit (market reference)

MOQ: 800 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandAlpha & Omega Semiconductor Inc.
ModelAOB15S65L
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)290mOhm @ 7.5A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)17.2 nC @ 10 V
Input Capacitance (Ciss)841 pF @ 100 V
Power Dissipation (Max)208W (Tc)
Drive Voltage10V
Supplier Device PackageTO-263 (D2Pak)
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

AOB15S65L by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 290mOhm @ 7.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs290mOhm @ 7.5A, 10V
Power Dissipation (Max)208W (Tc)
Gate Charge (Qg) (Max) @ Vgs17.2 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds841 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C15A (Tc)

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