PartsCubeGlobal
Alpha & Omega Semiconductor Inc.8-SOIC (0.154", 3.90mm Width)RoHS

AO4612L

MOSFET N/P-CH 60V 8SOIC

Subcategory

Transistors Fets Mosfets Arrays

Package

8-SOIC (0.154", 3.90mm Width)

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandAlpha & Omega Semiconductor Inc.
ModelAO4612L
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)60V
Rds On (Max)56mOhm @ 4.5A, 10V, 105mOhm @ 3.2A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)10.5nC @ 10V, 20nC @ 10V
Input Capacitance (Ciss)540pF @ 30V, 1120pF @ 30V
Power Dissipation (Max)2W
Supplier Device Package8-SOIC
RoHSRoHS
Part StatusObsolete

Application & Notes

AO4612L by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 60V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 56mOhm @ 4.5A, 10V, 105mOhm @ 3.2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

FDSS2407Rochester Electronics, LLC

POWER FIELD-EFFECT TRANSISTOR, 3

All Technical Specifications

FET TypeN and P-Channel
FET FeatureStandard
Power - Max2W
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs56mOhm @ 4.5A, 10V, 105mOhm @ 3.2A, 10V
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 10V, 20nC @ 10V
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds540pF @ 30V, 1120pF @ 30V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta), 3.2A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.