Toshiba Semiconductor and Storage8-DIP (0.300", 7.62mm)RoHS
6N138F
OPTOISO 2.5KV DARL W/BASE 8DIP
Category
Subcategory
Optoisolators Transistor Photovoltaic Output
Package
8-DIP (0.300", 7.62mm)
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 6N138F |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | 0°C ~ 70°C |
| Supplier Device Package | 8-DIP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
6N138F by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-DIP (0.300", 7.62mm) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input Type | DC |
| Output Type | Darlington with Base |
| Number of Channels | 1 |
| Voltage - Isolation | 2500Vrms |
| Voltage - Output (Max) | 18V |
| Current - Output / Channel | 60mA |
| Current Transfer Ratio (Min) | 300% @ 1.6mA |
| Voltage - Forward (Vf) (Typ) | 1.65V |
| Turn On / Turn Off Time (Typ) | 1µs, 4µs |
| Current - DC Forward (If) (Max) | 20 mA |
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