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Toshiba Semiconductor and Storage8-DIP (0.300", 7.62mm)RoHS

6N136F

OPTOISO 2.5KV TRANS W/BASE 8DIP

6N136F by Toshiba Semiconductor and Storage
Category

Isolators

Subcategory

Optoisolators Transistor Photovoltaic Output

Package

8-DIP (0.300", 7.62mm)

Status

Last Time Buy

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
Model6N136F
Package / Case8-DIP (0.300", 7.62mm)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 100°C
Supplier Device Package8-DIP
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

6N136F by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-DIP (0.300", 7.62mm) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

Input TypeDC
Output TypeTransistor with Base
Number of Channels1
Voltage - Isolation2500Vrms
Voltage - Output (Max)15V
Current - Output / Channel8mA
Current Transfer Ratio (Min)19% @ 16mA
Voltage - Forward (Vf) (Typ)1.65V
Turn On / Turn Off Time (Typ)200ns, 500ns
Current - DC Forward (If) (Max)25 mA

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