62-0095PBF
MOSFET N-CH 20V 10A/12A 8SOIC
Transistors Fets Mosfets Single
-
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | 62-0095PBF |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 13.4mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.55V @ 250µA |
| Gate Charge (Qg) | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) | 900 pF @ 10 V |
| Power Dissipation (Max) | 2W |
| Drive Voltage | 10V |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
62-0095PBF by Infineon Technologies is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The - package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13.4mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 62-0095PBF
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Power Dissipation (Max) | 2W |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 12A (Tc) |
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