Rochester Electronics, LLCTO-220-3, Short TabRoHS
2SK3821-E
MOSFET N-CH 100V 40A SMP
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Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-220-3, Short Tab
Status
Obsolete
$2.81 / unit (market reference)
MOQ: 107 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2SK3821-E |
| Package / Case | TO-220-3, Short Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 33mOhm @ 20A, 10V |
| Vgs(th) (Max) | 2.6V @ 1mA |
| Gate Charge (Qg) | 73 nC @ 10 V |
| Input Capacitance (Ciss) | 4200 pF @ 20 V |
| Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
| Drive Voltage | 4V, 10V |
| Supplier Device Package | SMP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SK3821-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3, Short Tab package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 33mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 20A, 10V |
| Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
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