Toshiba Semiconductor and StorageTO-3P-3, SC-65-3RoHS
2SK3700(F)
MOSFET N-CH 900V 5A TO3P
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-3P-3, SC-65-3
Status
Active
$2.22 / unit (market reference)
MOQ: 50 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SK3700(F) |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 900 V |
| Rds On (Max) | 2.5Ohm @ 3A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Gate Charge (Qg) | 28 nC @ 10 V |
| Input Capacitance (Ciss) | 1150 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Supplier Device Package | TO-3P(N) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2SK3700(F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 900 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.5Ohm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 3A, 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 900 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
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