Toshiba Semiconductor and StorageTO-236-3, SC-59, SOT-23-3RoHS
2SK209-GR(TE85L,F)
TRANS SJT N-CH 10MA SC59
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-236-3, SC-59, SOT-23-3
Status
Active
$0.50 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SK209-GR(TE85L,F) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 125°C (TA) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) | 13 pF @ 10 V |
| Power Dissipation (Max) | 150mW (Ta) |
| Supplier Device Package | SC-59 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2SK209-GR(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at - / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 150mW (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 13 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 10mA (Ta) |
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