Toshiba Semiconductor and StorageTO-236-3, SC-59, SOT-23-3RoHS
2SJ168TE85LF
MOSFET P-CH 60V 200MA SC59
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-236-3, SC-59, SOT-23-3
Status
Active
$0.94 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SJ168TE85LF |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 2Ohm @ 50mA, 10V |
| Input Capacitance (Ciss) | 85 pF @ 10 V |
| Power Dissipation (Max) | 200mW (Ta) |
| Drive Voltage | 10V |
| Supplier Device Package | SC-59 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2SJ168TE85LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2Ohm @ 50mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 10V |
| Power Dissipation (Max) | 200mW (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 85 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
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