Toshiba Semiconductor and StorageTO-220-3 Full PackRoHS
2SD2406-Y(F)
TRANS NPN 80V 4A TO220NIS
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-220-3 Full Pack
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SD2406-Y(F) |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 25 W |
| Supplier Device Package | TO-220NIS |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SD2406-Y(F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 25 W |
| Transistor Type | NPN |
| Frequency - Transition | 8MHz |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 300mA, 3A |
| Current - Collector (Ic) (Max) | 4 A |
| Current - Collector Cutoff (Max) | 30µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
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