Toshiba Semiconductor and StorageTO-226-3, TO-92-3 Long BodyRoHS
2SC5201(T6MURATAFM
TRANS NPN 50MA 600V TO226-3
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-226-3, TO-92-3 Long Body
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SC5201(T6MURATAFM |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 900 mW |
| Supplier Device Package | TO-92MOD |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SC5201(T6MURATAFM by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Long Body package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| Power - Max | 900 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500mA, 20mA |
| Current - Collector (Ic) (Max) | 50 mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 20mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.