Toshiba Semiconductor and StorageTO-226-3, TO-92-3 Long BodyRoHS
2SC2229-O(T6SAN2FM
TRANS NPN 50MA 150V TO226-3
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-226-3, TO-92-3 Long Body
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SC2229-O(T6SAN2FM |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 800 mW |
| Supplier Device Package | TO-92MOD |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SC2229-O(T6SAN2FM by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Long Body package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 800 mW |
| Transistor Type | NPN |
| Frequency - Transition | 120MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector (Ic) (Max) | 50 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
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