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Toshiba Semiconductor and StorageSOT-723RoHS

2SA1955FVBTPL3Z

TRANS PNP 12V 0.4A VESM

2SA1955FVBTPL3Z by Toshiba Semiconductor and Storage
Subcategory

Transistors Bipolar Bjt Single

Package

SOT-723

Status

Obsolete

Datasheet

//media.digikey.com/pdf/Data%20Sheets/Toshiba%20PDFs/2SA1955FV.pdf

$0.12 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
Model2SA1955FVBTPL3Z
Package / CaseSOT-723
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
Power Dissipation (Max)100 mW
Supplier Device PackageVESM
RoHSRoHS
Part StatusObsolete

Application & Notes

2SA1955FVBTPL3Z by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-723 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

Power - Max100 mW
Transistor TypePNP
Frequency - Transition130MHz
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 200mA
Current - Collector (Ic) (Max)400 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 10mA, 2V
Voltage - Collector Emitter Breakdown (Max)12 V

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