Toshiba Semiconductor and StorageTO-236-3, SC-59, SOT-23-3RoHS
2SA1312GRTE85LF
TRANS PNP 120V 0.1A S-MINI
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-236-3, SC-59, SOT-23-3
Status
Active
$0.06 / unit (market reference)
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SA1312GRTE85LF |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 125°C (TJ) |
| Power Dissipation (Max) | 150 mW |
| Supplier Device Package | S-Mini |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2SA1312GRTE85LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 150 mW |
| Transistor Type | PNP |
| Frequency - Transition | 100MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
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