Toshiba Semiconductor and StorageTO-226-3, TO-92-3 Long BodyRoHS
2SA1020-Y(ND1,AF)
TRANS PNP 2A 50V TO226-3
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-226-3, TO-92-3 Long Body
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | 2SA1020-Y(ND1,AF) |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 900 mW |
| Supplier Device Package | TO-92MOD |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SA1020-Y(ND1,AF) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Long Body package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 900 mW |
| Transistor Type | PNP |
| Frequency - Transition | 100MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 1A |
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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