GeneSiC SemiconductorTO-276AARoHS
2N7636-GA
TRANS SJT 650V 4A TO276
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-276AA
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | GeneSiC Semiconductor |
| Model | 2N7636-GA |
| Package / Case | TO-276AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 415mOhm @ 4A |
| Input Capacitance (Ciss) | 324 pF @ 35 V |
| Power Dissipation (Max) | 125W (Tc) |
| Supplier Device Package | TO-276 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2N7636-GA by GeneSiC Semiconductor is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-276AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 415mOhm @ 4A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Rds On (Max) @ Id, Vgs | 415mOhm @ 4A |
| Power Dissipation (Max) | 125W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 324 pF @ 35 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |
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