onsemiTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)RoHS
2N6027RL1G
THYRISTOR PROG UNIJUNCT 40V TO92
Category
Subcategory
Transistors Programmable Unijunction
Package
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | 2N6027RL1G |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Power Dissipation (Max) | 300 mW |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2N6027RL1G by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Voltage | 40V |
| Current - Peak | 2 µA |
| Voltage - Output | 11V |
| Current - Valley (Iv) | 50 µA |
| Voltage - Offset (Vt) | 1.6 V |
| Power Dissipation (Max) | 300 mW |
| Current - Gate to Anode Leakage (Igao) | 10 nA |
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