Rochester Electronics, LLCTO-226-3, TO-92-3 Long BodyRoHS
2N5639G
JFET N-CH 35V 0.31W TO92
Category
Subcategory
Transistors Jfets
Package
TO-226-3, TO-92-3 Long Body
Status
Obsolete
$0.12 / unit (market reference)
MOQ: 2404 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2N5639G |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) | 10pF @ 12V (VGS) |
| Power Dissipation (Max) | 310 mW |
| Supplier Device Package | TO-92 (TO-226) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2N5639G by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Long Body package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Power - Max | 310 mW |
| Resistance - RDS(On) | 60 Ohms |
| Drain to Source Voltage (Vdss) | 30 V |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 25 mA @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 12V (VGS) |
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