onsemi Unveils EliteSiC M4 SiC Platform

onsemi has launched EliteSiC M4, its fourth-generation silicon carbide (SiC) platform based on a trench architecture designed to improve next-generation power systems. The new technology delivers up to 30% higher power density and 35% lower losses than the previous generation, addressing growing efficiency requirements in AI data centers, electric vehicles and energy infrastructure.

As demand for computing power, electrification and renewable energy continues to rise, system designers face increasing pressure to deliver more power within existing space, thermal and efficiency constraints. EliteSiC M4 is designed to help overcome these challenges by enabling more compact and efficient power conversion systems while reducing cooling requirements.

According to onsemi, the platform builds on the company’s extensive silicon carbide experience, supported by more than 16 billion miles of real-world operation in automotive and industrial applications. The improved performance provides developers with greater flexibility when designing high-voltage power systems.

Key enhancements include a 20% to 50% reduction in specific on-resistance (RSP), enabling lower conduction losses and faster switching performance. The platform also improves switching figures of merit by 67% in hard-switching applications and 50% in soft-switching environments, helping engineers design smaller, more efficient power supplies.

The technology supports a wide range of packaging options, including top-side-cooled surface-mount packages and high-power modules. In addition, EliteSiC M4 is qualified for demanding operating conditions, supporting temperatures of 185°C and above for automotive, industrial, and other high-reliability applications.

The benefits are particularly relevant for three key markets. In AI data centers, higher-density power conversion can improve computing capacity without requiring proportional growth in power infrastructure. In electric vehicles, more efficient traction inverters can improve driving range and drivetrain performance. For energy infrastructure, including solar and energy-storage systems, the technology helps reduce conversion losses and maximize energy utilization.

The first EliteSiC M4 product, a 750 V bare die for automotive traction inverter applications, is available immediately. Additional devices covering voltage ratings up to 1200 V are expected to be introduced beginning in 2027.

The post onsemi Unveils EliteSiC M4 SiC Platform appeared first on Power Electronics News.