Infineon Advances 300-mm SiC Production

Infineon Technologies has successfully processed 300-mm silicon carbide (SiC) wafers into functional power devices at its semiconductor fab in Villach, Austria. The company describes this as the first demonstration of functional SiC power devices manufactured on 300 mm wafers in a full-scale semiconductor production environment. The process uses existing silicon manufacturing equipment, demonstrating the feasibility of extending established production infrastructure to a wider-bandgap material.

Moving from 200 mm to 300 mm wafers offers a potential manufacturing efficiency improvement, as the larger diameter provides approximately 2.3x more chips per wafer. The achievement therefore represents an important step towards the future industrialization of 300 mm SiC production and the development of a more scalable supply base. Infineon will define the technology roadmap and potential production ramp-up in collaboration with customers and partners, while continuing to implement its existing 200 mm SiC manufacturing plans.

SiC is used in power conversion systems that require high efficiency, power density, and operation at elevated voltages and temperatures. Its material properties make it suitable for applications including electric vehicle traction inverters and onboard chargers, EV charging infrastructure, large-scale energy storage, industrial drives and uninterruptible power supplies. Demand is also growing in AI data centers, where SiC can support solid-state transformers, circuit breakers and power supply units. Infineon addresses these markets through its CoolSiC portfolio.

Alongside the 300-mm wafer processing milestone, Infineon has demonstrated the feasibility of its Cold Split technology for 300-mm SiC at its Dresden site in Germany. The process separates wafers from a SiC boule with less material loss and substantially shorter processing times than conventional wire sawing. This can increase the number of wafers obtained from each crystal while reducing capital expenditure.

The developments complement Infineon’s manufacturing activities across silicon, SiC and gallium nitride (GaN). On 27 October 2026, the company announced an investment of approximately €1.1 billion in a high-volume GaN power semiconductor facility in Villach, based on 300-mm wafers. The latest SiC achievement extends its 300 mm manufacturing approach to a second wide-bandgap material.

Infineon will present the first processed 300mm SiC wafer publicly at electronica 2026 in Munich, from 10 to 13 November, at Hall C3, Booth 502.

Cover Image: Compared to a 200 mm wafer, a 300 mm wafer offers 2.3 times more chips per wafer (Source: Infineon Technologies)

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