Nexperia Adds GaN and SiC Devices for High-Efficiency Power Conversion

Nexperia is expanding its gallium nitride (GaN) and silicon carbide (SiC) power semiconductor portfolios with new devices that deliver higher efficiency, power density, and thermal performance across industrial, automotive, and computing applications. The additions include ultra-low-resistance GaN FETs covering 18 V to 200 V and a new family of 750 V SiC trench MOSFETs.

The new GaN devices are designed for applications including AI data centers, humanoid robotics, battery-powered tools, renewable energy systems, motor drives, and high-efficiency DC-DC conversion. Their key characteristic is extremely low on-state resistance, reaching sub-milliohm values within a 10 mm² PCB footprint. Low RDS(on) × QG and RDS(on) × QOSS figures of merit also support higher switching frequencies and reduced switching losses.

The 100 V to 200 V devices address primary- and secondary-side stages in isolated power converters, as well as non-isolated step-down topologies. Target applications include half-bridge and full-bridge LLC resonant converters and synchronous rectification in 48 V power-distribution architectures. The 18 V to 40 V range is optimized for secondary-side synchronous rectification and low-voltage distribution, including conversion from 12 V rails to processor core voltages below 1 V.

In motor-control applications, the combination of low RDS(on), compact packages, and fast switching supports high-current three-phase BLDC and PMSM drives. It also enables optimized dead-time control and, where required, 100% duty-cycle operation.

The flagship GANE0R8-100QTM is a 100 V device with typical RDS(on) of 0.75 mΩ in a 3 mm × 5 mm PQFN package. It is now available, along with five other products spanning 25 V to 200 V, with resistance values down to 0.37 mω. Two further devices, including the 18 V GANE0R3-015QTL with typical RDS(on) of 0.32 mΩ, are scheduled for Q1 2027.

Alongside the GaN expansion, Nexperia has introduced 750 V SiC trench MOSFETs for EV charging infrastructure, photovoltaic inverters, industrial drives, AI and high-performance computing power supplies, onboard chargers and DC-DC converters. The devices combine low conduction and switching losses with stable RDS(on) across operating temperatures, fast switching and robust body-diode performance. These characteristics support predictable operation in hard-switching topologies and can help reduce cooling requirements.

The SiC family also introduces TOLL packaging to Nexperia’s portfolio. Its compact footprint and low package inductance support high-power-density designs and high-frequency switching, complementing existing through-hole, bottom-cooled and top-cooled options. The 750 V devices are available now in industrial and AEC-Q101-qualified automotive versions.

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