SemiQ Launches 750 V and 1200 V Gen4 SiC MOSFETs
SemiQ Inc. has announced its fourth-generation QSiC
silicon carbide (SiC) power devices, including 1200 V and 750 V MOSFETs and bare dies. Designed for high-power conversion, the new devices combine lower on-resistance with improved switching performance to reduce power losses and support more compact, efficient power systems.
SemiQ Gen4 technology uses an optimized cell topology with a 36% reduction in cell pitch, along with refinements to JFET and P-well implantation. These changes deliver a reported 23% reduction in specific on-resistance compared with previous generations, increasing current capability and reducing conduction losses.
The 1200 V devices achieve a 21% reduction in drain-source on-resistance (RDS(on)) compared with Gen3, from 14 mΩ to 11 mΩ. Total switching energy is also reduced by more than 11%, from 1,677 µJ to 1,491 µJ, while retaining the same 5 × 5 mm die size as the previous-generation 1200 V devices. Lower conduction and switching losses can reduce thermal loading and improve power density in power-conversion equipment.
The Gen4 portfolio also introduces a 750 V SiC MOSFET. This device offers an RDS(on) of 9 mΩ and a total switching energy of 871 µJ, providing an additional option for designs requiring lower-voltage SiC switching devices.
To support device reliability, the Gen4 MOSFET dies undergo wafer-level gate-oxide burn-in screening at voltages exceeding 1,400 V for the 1200 V devices and 800 V for the 750 V devices. Both device types are avalanche-tested to 800 mJ.
The MOSFETs are available in a four-pin TO-247-4L package and as bare dies, giving designers flexibility in component selection and power-stage integration.
SemiQ is targeting the Gen4 family at electric vehicle charging infrastructure, solar inverters, high-voltage DC/DC and DC/AC converters, switch-mode power supplies, uninterruptible power supplies, induction heating, welding equipment and motor drives.
The devices are available immediately. SemiQ also plans to showcase the Gen4 portfolio at Electronica 2026, scheduled for November 10–13, at Alfatec’s booth A6.620. Datasheets and further technical information are available through the company’s QSiC MOSFET product page.
| Part Numbers | VDC | Package | RDSon |
| GP4T009A075H | 750 V | TO-247-4L | 9 mΩ |
| GP4T009A075X | 750 V | N/A | 9 mΩ |
| GP4T011A120H | 1200 V | TO-247-4L | 11 mΩ |
| GP4T011A120X | 1200 V | N/A | 11mΩ |
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