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Wafer-Level Burn-In Improves WBG Device Reliability, Automotive and Aerospace WBG Device Testing, Direct Dielectric Cooling for Power Converters: Power Electronics Week Insights

Power Electronics News

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Wafer-Level Burn-In Improves WBG Device Reliability, Automotive and Aerospace WBG Device Testing, and Direct Dielectric Cooling for Power Converters!

Also, check News Archives – Power Electronics News and Technical Articles Archives – Power Electronics News for the complete list of news and articles from our website.

NEWS

Infineon Advances GaN Power for 800 VDC AI Data Centers

Infineon and NVIDIA advance GaN-based intermediate bus converters to improve power density and efficiency in 800 VDC AI data centers.


Enphase, Infineon Develop 900 V GaN Bidirectional Switches

Enphase and Infineon are integrating 900 V GaN bidirectional switches into SST systems designed for AI data center power conversion.


Vertical Semiconductor Targets $73M in CHIPS Funding for GaN

The proposed CHIPS incentives would advance vertical GaN transistors aimed at improving AI data center power efficiency and density.


Murata Develops World’s Smallest 008004-Inch NTC Thermistor

The NCU01 series maintains ±1% resistance and B-constant tolerances, with initial samples planned for October 2026 and production in 2027.


Flex Completes EPC Power Acquisition

The deal adds more than 15 GW of deployed power conversion technology and strengthens capabilities in grid stabilization and backup power.


You can find more news here: News Archives – Power Electronics News

ARTICLES

Wide Bandgap Monthly Insights – October 2026

Here’s a RoundUp of this month’s must-read news about silicon carbide (SiC), gallium nitride (GaN), and Wide Bandgap Materials! 


Wafer-Level Burn-In for Improved WBG Device Reliability

Wafer-level burn-in screens SiC and GaN devices for infant mortality failures before packaging, improving module yields and reliability.


Direct Dielectric Cooling for Power Converters

Direct dielectric cooling brings insulating liquid closer to SiC/GaN devices, shortening thermal paths but complicating insulation design.


Automotive and Aerospace Wide-Bandgap Device Testing

Stefano Lovati reviews WBG device test methodologies covering dynamic characterization, short-circuit ruggedness, thermal cycling, and gate oxide reliability.


You can find more articles here: Technical Articles Archives – Power Electronics News

The post Wafer-Level Burn-In Improves WBG Device Reliability, Automotive and Aerospace WBG Device Testing, Direct Dielectric Cooling for Power Converters: Power Electronics Week Insights appeared first on Power Electronics News.