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Infineon Advances GaN Power for 800 VDC AI Data Centers

Power Electronics News
Infineon Advances GaN Power for 800 VDC AI Data Centers.

Infineon Technologies AG is expanding its collaboration with NVIDIA on 800 V direct-current (VDC) power architectures for artificial intelligence (AI) data centers. The latest development focuses on high-voltage intermediate bus converters (IBCs), a key stage in the power delivery chain that steps down the main distribution voltage to levels suitable for downstream conversion and processor power delivery.

The collaboration builds on work announced in May 2025 and further detailed in October 2025, which addressed serviceable, hot-swappable server racks operating with 800 VDC power distribution.

As AI workloads drive power consumption higher, data centers are exploring 800 VDC distribution alongside existing AC and lower-voltage DC architectures. Higher distribution voltages can reduce current and associated losses, while IBCs convert the main bus voltage into intermediate rails for subsequent stages that generate the precise core and point-of-load voltages AI processors require.

Gallium nitride (GaN) power devices offer faster switching and lower conduction and switching losses than conventional silicon technology. At the IBC stage, switching frequencies up to 1 MHz enable smaller magnetic components and passive devices, reducing converter size and board height. These characteristics are particularly important as rack power levels approach the megawatt range and space, thermal management and transient response become increasingly demanding.

Infineon combines its GaN portfolio with PSoC™ Control C3 controllers and EiceDRIVER™ gate-driver products to provide integrated IBC solutions. The company supports conversion ratios including 800 V to 50 V, 800 V to 12 V, and 800 V to 6 V, allowing designers to select intermediate bus architectures based on system requirements.

Infineon offers intermediate bus conversion solutions based on silicon, GaN and silicon carbide (SiC), covering different performance and design requirements. Its positioning combines power semiconductor technology with in-house manufacturing, application engineering and system-level expertise.

The collaboration with NVIDIA also extends beyond intermediate bus conversion. It also focuses on power-path protection, including hot-swap controller functionality intended to support safe servicing and the deployment of future server boards in 800 VDC architectures.

Together, these developments target power delivery across the data center, from grid-facing power supply units through rack-level distribution and intermediate conversion to the processor’s point of load. The objective is to meet the growing demands of AI infrastructure through improved conversion efficiency, increased power density, and serviceability at higher system voltages.

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