EMI Guidance for Power Converters, FinFET-Based Power Devices, Simulation-Driven Thermal Modeling for SiC and GaN Converters: Power Electronics Week Insights
Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on EMI Guidance for Power Converters, FinFET-Based Power Devices, and Simulation-Driven Thermal Modeling for SiC and GaN Converters!
Also, check News Archives – Power Electronics News and Technical Articles Archives – Power Electronics News for the complete list of news and articles from our website.
NEWS
Navitas Launches 2300-V SiC Power Module for Grid Infrastructure
2300 V SiC technology targets higher efficiency and power density in AI data centers, energy storage, and grid applications.
Allegro Introduces 48V Power and Precision Sensors for Robotics
Compact 48V power management and precision position sensors help humanoid robots improve integration, motion control, and functional safety.
EPC GaN FETs Enable 4 kW High-Efficiency Converter
The dual-phase EVAL-LT7930-AZ combines ADI’s LT7930 controller with EPC2361 transistors for high-current power conversion.
STMicroelectronics Launches QML-V Qualified LVDS Receiver
The new RHFLVDS42 supports data rates up to 600Mbps, 300krad(Si) radiation resistance, and 8kV ESD immunity for aerospace systems.
onsemi and Sungrow Target 99.3% Efficiency in Utility-Scale BESS
The PowerTitan 3.0 platform supports conversion units up to 450 kW and could save over 475 MWh annually in a 100 MW installation.
You can find more news here: News Archives – Power Electronics News
ARTICLES
Leveraging the FinFET Structure for Power: Applications and Use Cases
FinFET-based voltage regulators and vertical GaN transistors raise power density at opposite ends of power conversion.
Practical EMI Guidance for Power Converters
Practical guidance for tracing EMI back to switching events, noise propagation paths, and measurement errors in wide-bandgap converters.
Simulation-Driven Thermal Modeling for SiC and GaN Converters
SiC and GaN thermal management relies on multiscale simulation spanning device-level FEA to system-level electro-thermal co-simulation.
Dual-Side Cooling Comes to 650-V GaN for 800-V AI Data Centers
The purpose, applications, and improvements of the GaN-based dual-side cooled package versus TOLT variants.
You can find more articles here: Technical Articles Archives – Power Electronics News
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