Navitas Launches 2300-V SiC Power Module for Grid Infrastructure
Navitas Semiconductor has introduced the G4H08MT23GB4 family of 2300 V silicon carbide (SiC) full-bridge power modules, designed to improve efficiency and power density in energy conversion and grid infrastructure. Based on the industry-standard SiCPAK
form factor, the modules feature an on-state resistance (RDS(on)) of 8 mΩ and use Navitas’ fourth-generation GeneSiC Trench-Assisted Planar (TAP) technology.
The new family extends Navitas’ ultra-high-voltage SiC portfolio, which includes 2300 V and 3300 V devices. Target applications include solid-state transformers (SSTs), grid-scale battery energy storage systems, solar inverters, megawatt EV charging infrastructure, and high-voltage DC-DC conversion.
As AI data centers increase power demand, grid-connected architectures require efficient conversion between medium-voltage AC supplies and the high-voltage DC distribution systems used within data centers. Navitas’ 2300 V SiC modules support solid-state transformers that perform this conversion while improving power density and reducing conversion losses.
The technology also meets the demanding operating conditions of renewable energy, energy storage, hydrogen production, industrial motor drives, and high-voltage power supplies.
The modules incorporate an aluminum nitride (AlN) active-metal-brazed (AMB) substrate to improve heat spreading and provide electrical isolation exceeding 5 kV. Epoxy-resin potting reduces internal mechanical stress and helps limit moisture and contaminant ingress. According to Navitas, the material offers ten times the thermal conductivity of silicone gel.
High-current press-fit pins provide twice the current-carrying capability per pin compared with standard press-fit connections. An optional pre-applied thermal interface material (TIM) is also available to simplify heatsink assembly and improve manufacturing consistency.
The G4H08MT23GB4 family is scheduled for qualification under Navitas’ AEC-Plus reliability benchmark, which extends testing beyond AEC-Q101 and JEDEC requirements. The program includes dynamic reverse-bias and dynamic gate-switching tests, extended high-temperature, high-voltage testing, power and temperature cycling, and high-voltage humidity testing. These procedures evaluate reliability under demanding switching conditions and long-duration operating profiles.
Samples of the G4H08MT23GB4(HC) family are available immediately, including high-current variants and options with pre-applied TIM. Engineers can also request the EVB-UHVSIC-GB-E-DPT-1 double-pulse test system to evaluate switching performance. Navitas provides a technical white paper on its Trench-Assisted Planar technology through its website.
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