Ferric’s New Dual-Sided IVR for In-Package Integration, Monolithically Integrated AlGaN/GaN Diode and Transistor, Building a Simple Boost Converter in QSPICE: Power Electronics Week Insights
Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Ferric’s New Dual-Sided IVR for In-Package Integration, Monolithically Integrated AlGaN/GaN Diode and Transistor, and Building a Simple Boost Converter in QSPICE!
Also, check News Archives – Power Electronics News and Technical Articles Archives – Power Electronics News for the complete list of news and articles from our website.
NEWS
Navitas, NVIDIA Develop 24 kW 800V-to-12V Power Board
The GaN-based platform targets 97% full-load efficiency and over 2,000 W/in³ power density while simplifying high-power compute tray designs.
Microchip Launches Rad-Tolerant 20A GaN Converter for Space
The device supports FPGA, ASIC and MCU power rails with a 4.75V to 13.2V input range and radiation characterization up to 50 krad.
TI Unveils High-Speed ADC for AI Data Center Monitoring
The new portfolio combines transient fault detection, high-voltage power protection and precision clocking for AI infrastructure.
Navitas, Microchip Develop 800V AI Data Center Reference Design
The reference design combines 650V GaN FETs, a 200 MHz digital controller and hardware security for high-density rack power conversion.
You can find more news here: News Archives – Power Electronics News
ARTICLES
Replacing 48 MLCCs with 4 LKZ Capacitors for Compact, Cost-Effective Robot Joint Motor Controllers
Compared with the original configuration of 48 × 100 V, 10 μF MLCCs, the LKZ solution significantly reduces the number of components required to provide the DC-Link energy-storage function.
Power Electronics Course with QSPICE (Episode 19): Building a Simple Boost Converter
A microcontroller-driven boost converter lifts 12 V battery power using software PWM and a logic-level MOSFET.
Ferric’s New Dual-Sided IVR for In-Package Integration
Fe1767, which Ferric calls the world’s first dual-sided IVR, lowers input/output PDN impedance and frees BGA balls.
Monolithically Integrated AlGaN/GaN Diode and Transistor
A multi-channel AlGaN/GaN field-effect Schottky diode integrated with a MIS-HEMT lowers the third-quadrant reverse turn-on voltage.
You can find more articles here: Technical Articles Archives – Power Electronics News
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