ZXMN2A01E6TA
MOSFET N-CH 20V 2.5A SOT23-6
Transistors Fets Mosfets Single
SOT-23-6
Active
$0.63 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | ZXMN2A01E6TA |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 120mOhm @ 4A, 4.5V |
| Vgs(th) (Max) | 700mV @ 250µA |
| Gate Charge (Qg) | 3 nC @ 4.5 V |
| Input Capacitance (Ciss) | 303 pF @ 15 V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | SOT-23-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
ZXMN2A01E6TA by Diodes Incorporated is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 120mOhm @ 4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ZXMN2A01E6TA
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 4A, 4.5V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 303 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
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