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Toshiba Semiconductor and Storage8-PowerVDFNRoHS

XPN12006NC,L1XHQ

MOSFET N-CH 60V 20A 8TSON

XPN12006NC,L1XHQ by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Series

Automotive, AEC-Q101

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelXPN12006NC,L1XHQ
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)12mOhm @ 10A, 10V
Vgs(th) (Max)2.5V @ 0.2mA
Gate Charge (Qg)23 nC @ 10 V
Input Capacitance (Ciss)1100 pF @ 10 V
Power Dissipation (Max)65W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package8-TSON Advance-WF (3.1x3.1)
RoHSRoHS
Part StatusActive

Application & Notes

XPN12006NC,L1XHQ by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 0.2mA
Rds On (Max) @ Id, Vgs12mOhm @ 10A, 10V
Power Dissipation (Max)65W (Tc)
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C20A

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