VP2110K1-G
MOSFET P-CH 100V 120MA TO236AB
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Transistors Fets Mosfets Single
TO-236-3, SC-59, SOT-23-3
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | VP2110K1-G |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 12Ohm @ 500mA, 10V |
| Vgs(th) (Max) | 3.5V @ 1mA |
| Input Capacitance (Ciss) | 60 pF @ 25 V |
| Power Dissipation (Max) | 360mW (Ta) |
| Drive Voltage | 5V, 10V |
| Supplier Device Package | TO-236AB (SOT23) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
VP2110K1-G by Microchip Technology is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for VP2110K1-G
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 500mA, 10V |
| Power Dissipation (Max) | 360mW (Ta) |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Tj) |
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