VN0104N3-G-P013
MOSFET N-CH 40V 350MA TO92-3
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Transistors Fets Mosfets Single
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Price available on request
MOQ: 2000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | VN0104N3-G-P013 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 3Ohm @ 1A, 10V |
| Vgs(th) (Max) | 2.4V @ 1mA |
| Input Capacitance (Ciss) | 65 pF @ 25 V |
| Power Dissipation (Max) | 1W (Tc) |
| Drive Voltage | 5V, 10V |
| Supplier Device Package | TO-92-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
VN0104N3-G-P013 by Microchip Technology is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3Ohm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for VN0104N3-G-P013
Alternatives & Replacements
View All →STQ1HN60K3-AP
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MOSFET N-CH 600V 400MA TO92-3
VN10KN3-G-P002
MOSFET N-CH 60V 310MA TO92-3
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1A, 10V |
| Power Dissipation (Max) | 1W (Tc) |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 65 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
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