UPA2792AGR-E1-AT
POWER, 10A, 30V, N-CH MOSFET
Transistors Fets Mosfets Arrays
8-PowerSOIC (0.173", 4.40mm Width)
Obsolete
Price available on request
MOQ: 304 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | UPA2792AGR-E1-AT |
| Package / Case | 8-PowerSOIC (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 12.5mOhm @ 5A, 10V |
| Gate Charge (Qg) | 42nC @ 10V |
| Input Capacitance (Ciss) | 2200pF @ 10V |
| Power Dissipation (Max) | 2W |
| Supplier Device Package | 8-SOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA2792AGR-E1-AT by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerSOIC (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12.5mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA2792AGR-E1-AT
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 2W |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
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