UPA2680T1E-E2-AT
MOSFET N-CH 20V 3A 6MLP
Transistors Fets Mosfets Single
6-VDFN Exposed Pad
Obsolete
$0.55 / unit (market reference)
MOQ: 550 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | UPA2680T1E-E2-AT |
| Package / Case | 6-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 50mOhm @ 3A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 3.1 nC @ 4.5 V |
| Input Capacitance (Ciss) | 190 pF @ 10 V |
| Supplier Device Package | 6-MLP (3x3) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA2680T1E-E2-AT by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA2680T1E-E2-AT
Alternatives & Replacements
View All →FDFMA2P853
MOSFET P-CH 20V 3A 6MICROFET
NTLGF3501NT2G
MOSFET N-CH 20V 2.8A 6DFN
NTLGF3402PT2G
MOSFET P-CH 20V 2.3A 6DFN
FDFMA2P853T
MOSFET P-CH 20V 3A MICROFET
FDFMA2P853
MOSFET P-CH 20V 3A 6MICROFET
TSM301K12CQ RFG
MOSFET P-CH 20V 4.5A 6TDFN
All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.1 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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