UPA2670T1R-E2-AX
MOSFET 2P-CH 20V 3A 6HUSON
Transistors Fets Mosfets Arrays
6-WFDFN Exposed Pad
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | UPA2670T1R-E2-AX |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 79mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) | 5.1nC @ 4.5V |
| Input Capacitance (Ciss) | 473pF @ 10V |
| Power Dissipation (Max) | 2.3W |
| Supplier Device Package | 6-HUSON (2x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA2670T1R-E2-AX by Renesas Electronics America Inc is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 79mOhm @ 1.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA2670T1R-E2-AX
Alternatives & Replacements
View All →3LN04SS-TL-H
N-CHANNEL MOSFET
NTND3184NZTAG
MOSFET 2N-CH 20V 220MA 6XLLGA
EFC4601-M-TR
N-CHANNEL MOSFET
3LN04SS-TL-H-SY
N-CHANNEL MOSFET
MCH6660-TL-H
MOSFET N/P-CH 20V 2A/1.5A MCPH6
NTUD3127CT5G
MOSFET N/P-CH 20V SOT-963
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Power - Max | 2.3W |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 473pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.