UPA2351T1P-E4-A
MOSFET N-CH DUAL LGA
Transistors Fets Mosfets Arrays
4-XFBGA
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | UPA2351T1P-E4-A |
| Package / Case | 4-XFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 40mOhm @ 3A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 1mA |
| Gate Charge (Qg) | 7.1nC @ 4V |
| Input Capacitance (Ciss) | 523pF @ 10V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Supplier Device Package | 4-EFLIP-LGA (1.62x1.62) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA2351T1P-E4-A by Renesas Electronics America Inc is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-XFBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 40mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA2351T1P-E4-A
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Power - Max | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 4V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 523pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) |
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