UPA2211T1M-T1-AT
MOSFET P-CH 12V 7.5A 8VSOF
Transistors Fets Mosfets Single
8-SMD, Flat Lead
Obsolete
Price available on request
MOQ: 400 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | UPA2211T1M-T1-AT |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 25mOhm @ 7.5A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 1mA |
| Gate Charge (Qg) | 14.9 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1350 pF @ 10 V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Supplier Device Package | 8-VSOF |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA2211T1M-T1-AT by Rochester Electronics, LLC is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SMD, Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 7.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA2211T1M-T1-AT
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All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.5A, 4.5V |
| Power Dissipation (Max) | 1.1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 14.9 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
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