UPA1970TE-T1-AT
MOSFET N-CH DUAL 20V SC-95
Transistors Fets Mosfets Arrays
SC-95-6
Last Time Buy
Price available on request
MOQ: 3000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | UPA1970TE-T1-AT |
| Package / Case | SC-95-6 |
| Mounting Type | Surface Mount |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 69mOhm @ 1A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 1mA |
| Gate Charge (Qg) | 2.3nC @ 4V |
| Input Capacitance (Ciss) | 160pF @ 10V |
| Power Dissipation (Max) | 1.15W |
| Supplier Device Package | SC-95-6, Mini Mold Thin |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
UPA1970TE-T1-AT by Renesas Electronics America Inc is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-95-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 69mOhm @ 1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA1970TE-T1-AT
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.15W |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A |
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