UPA1763G-E1-AT
MOSFET N-CH DUAL 60V 8-SOIC
Transistors Fets Mosfets Arrays
8-SOIC (0.173", 4.40mm Width)
Last Time Buy
Price available on request
MOQ: 2500 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | UPA1763G-E1-AT |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) | 57mOhm @ 2.3A, 4.5V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 20nC @ 10V |
| Input Capacitance (Ciss) | 870pF @ 10V |
| Power Dissipation (Max) | 2W |
| Supplier Device Package | 8-PSOP |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
UPA1763G-E1-AT by Renesas Electronics America Inc is an N-channel power MOSFET rated at 60V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 57mOhm @ 2.3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA1763G-E1-AT
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 2W |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
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