UM6J1NTN
MOSFET 2P-CH 30V 0.2A UMT6
Transistors Fets Mosfets Arrays
6-TSSOP, SC-88, SOT-363
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | UM6J1NTN |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 1.4Ohm @ 200mA, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Input Capacitance (Ciss) | 30pF @ 10V |
| Power Dissipation (Max) | 150mW |
| Supplier Device Package | UMT6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
UM6J1NTN by Rohm Semiconductor is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.4Ohm @ 200mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UM6J1NTN
Alternatives & Replacements
View All →NX6020CAKSX
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FDG6302P
SMALL SIGNAL P-CHANNEL MOSFET
SSM6N37FU,LF
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2N7002DW-TP
MOSFET 2N-CH 60V 0.115A SOT-363
DMN601DWKQ-7
MOSFET N-CHAN 41V 60V SOT363
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 150mW |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 200mA, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
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