ULN2803AFWG,C,EL
TRANS 8NPN DARL 50V 0.5A 18SOL
Transistors Bipolar Bjt Arrays
18-SOIC (0.295", 7.50mm Width)
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | ULN2803AFWG,C,EL |
| Package / Case | 18-SOIC (0.295", 7.50mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Power Dissipation (Max) | 1.31W |
| Supplier Device Package | 18-SOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
ULN2803AFWG,C,EL by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 18-SOIC (0.295", 7.50mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ULN2803AFWG,C,EL
Alternatives & Replacements
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All Technical Specifications
| Power - Max | 1.31W |
| Transistor Type | 8 NPN Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector (Ic) (Max) | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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