ULN2004APG,C,N
IC PWR RELAY 7NPN 1:1 16DIP
Transistors Bipolar Bjt Arrays
16-DIP (0.300", 7.62mm)
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | ULN2004APG,C,N |
| Package / Case | 16-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Power Dissipation (Max) | 1.47W |
| Supplier Device Package | 16-DIP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
ULN2004APG,C,N by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 16-DIP (0.300", 7.62mm) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ULN2004APG,C,N
Alternatives & Replacements
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All Technical Specifications
| Power - Max | 1.47W |
| Transistor Type | 7 NPN Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
| Current - Collector (Ic) (Max) | 500mA |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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