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UnitedSiCTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS

UF3C120150B7S

1200V/150MOHM, SIC, FAST CASCODE

UF3C120150B7S by UnitedSiC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandUnitedSiC
ModelUF3C120150B7S
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Rds On (Max)180mOhm @ 5A, 12V
Vgs(th) (Max)5.5V @ 10mA
Gate Charge (Qg)25.7 nC @ 12 V
Input Capacitance (Ciss)738 pF @ 100 V
Power Dissipation (Max)136W (Tc)
Drive Voltage12V
Supplier Device PackageD2PAK-7
RoHSRoHS
Part StatusActive

Application & Notes

UF3C120150B7S by UnitedSiC is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 180mOhm @ 5A, 12V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologySiCFET (Cascode SiCJFET)
FET FeatureSuper Junction
Vgs(th) (Max) @ Id5.5V @ 10mA
Rds On (Max) @ Id, Vgs180mOhm @ 5A, 12V
Power Dissipation (Max)136W (Tc)
Gate Charge (Qg) (Max) @ Vgs25.7 nC @ 12 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds738 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)12V
Current - Continuous Drain (Id) @ 25°C17A (Tc)

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