TW070J120B,S1Q
SICFET N-CH 1200V 36A TO3P
Transistors Fets Mosfets Single
TO-3P-3, SC-65-3
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TW070J120B,S1Q |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 90mOhm @ 18A, 20V |
| Vgs(th) (Max) | 5.8V @ 20mA |
| Gate Charge (Qg) | 67 nC @ 20 V |
| Input Capacitance (Ciss) | 1680 pF @ 800 V |
| Power Dissipation (Max) | 272W (Tc) |
| Drive Voltage | 20V |
| Supplier Device Package | TO-3P(N) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TW070J120B,S1Q by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 90mOhm @ 18A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TW070J120B,S1Q
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 5.8V @ 20mA |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 18A, 20V |
| Power Dissipation (Max) | 272W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
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