TPN4R712MD,L1Q
MOSFET P-CH 20V 36A 8TSON
Transistors Fets Mosfets Single
8-PowerVDFN
U-MOSVI
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPN4R712MD,L1Q |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 4.7mOhm @ 18A, 4.5V |
| Vgs(th) (Max) | 1.2V @ 1mA |
| Gate Charge (Qg) | 65 nC @ 5 V |
| Input Capacitance (Ciss) | 4300 pF @ 10 V |
| Power Dissipation (Max) | 42W (Tc) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TPN4R712MD,L1Q by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.7mOhm @ 18A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TPN4R712MD,L1Q
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 18A, 4.5V |
| Power Dissipation (Max) | 42W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
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