TPN22006NH,LQ
MOSFET N-CH 60V 9A 8TSON
Transistors Fets Mosfets Single
8-PowerVDFN
U-MOSVIII-H
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPN22006NH,LQ |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 22mOhm @ 4.5A, 10V |
| Vgs(th) (Max) | 4V @ 100µA |
| Gate Charge (Qg) | 12 nC @ 10 V |
| Input Capacitance (Ciss) | 710 pF @ 30 V |
| Power Dissipation (Max) | 700mW (Ta), 18W (Tc) |
| Drive Voltage | 6.5V, 10V |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TPN22006NH,LQ by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22mOhm @ 4.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TPN22006NH,LQ
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.5A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 18W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
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