PartsCube Global

Toshiba Semiconductor and Storage8-PowerVDFNRoHS

TPCA8105(TE12L,Q,M

MOSFET P-CH 12V 6A 8SOP

Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelTPCA8105(TE12L,Q,M
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Rds On (Max)33mOhm @ 3A, 4.5V
Vgs(th) (Max)1.2V @ 200µA
Gate Charge (Qg)18 nC @ 5 V
Input Capacitance (Ciss)1600 pF @ 10 V
Power Dissipation (Max)1.6W (Ta), 20W (Tc)
Drive Voltage1.8V, 4.5V
Supplier Device Package8-SOP Advance (5x5)
RoHSRoHS
Part StatusObsolete

Application & Notes

TPCA8105(TE12L,Q,M by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 33mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 200µA
Rds On (Max) @ Id, Vgs33mOhm @ 3A, 4.5V
Power Dissipation (Max)1.6W (Ta), 20W (Tc)
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C6A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.