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Toshiba Semiconductor and Storage8-PowerVDFNRoHS

TPCA8045-H(T2L1,VM

MOSFET N-CH 40V 46A 8SOP

TPCA8045-H(T2L1,VM by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Series

U-MOSVI-H

Status

Last Time Buy

Price available on request

MOQ: 5000 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelTPCA8045-H(T2L1,VM
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)3.6mOhm @ 23A, 10V
Vgs(th) (Max)2.3V @ 1mA
Gate Charge (Qg)90 nC @ 10 V
Input Capacitance (Ciss)7540 pF @ 10 V
Power Dissipation (Max)1.6W (Ta), 45W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package8-SOP Advance (5x5)
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

TPCA8045-H(T2L1,VM by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.6mOhm @ 23A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3V @ 1mA
Rds On (Max) @ Id, Vgs3.6mOhm @ 23A, 10V
Power Dissipation (Max)1.6W (Ta), 45W (Tc)
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds7540 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C46A (Ta)

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