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Toshiba Semiconductor and Storage8-SOIC (0.154", 3.90mm Width)RoHS

TPC8408,LQ(S

MOSFET N/P-CH 40V 6.1A/5.3A 8SOP

TPC8408,LQ(S by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Arrays

Package

8-SOIC (0.154", 3.90mm Width)

Status

Active

Price available on request

MOQ: 2500 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelTPC8408,LQ(S
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)40V
Rds On (Max)32mOhm @ 3.1A, 10V
Vgs(th) (Max)2.3V @ 100µA
Gate Charge (Qg)24nC @ 10V
Input Capacitance (Ciss)850pF @ 10V
Power Dissipation (Max)450mW
Supplier Device Package8-SOP
RoHSRoHS
Part StatusActive

Application & Notes

TPC8408,LQ(S by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 40V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 32mOhm @ 3.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN and P-Channel
FET FeatureLogic Level Gate
Power - Max450mW
Vgs(th) (Max) @ Id2.3V @ 100µA
Rds On (Max) @ Id, Vgs32mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Drain to Source Voltage (Vdss)40V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 10V
Current - Continuous Drain (Id) @ 25°C6.1A, 5.3A

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