TPC8213-H(TE12LQ,M
MOSFET 2N-CH 60V 5A SOP8
Transistors Fets Mosfets Arrays
8-SOIC (0.173", 4.40mm Width)
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPC8213-H(TE12LQ,M |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) | 50mOhm @ 2.5A, 10V |
| Vgs(th) (Max) | 2.3V @ 1mA |
| Gate Charge (Qg) | 11nC @ 10V |
| Input Capacitance (Ciss) | 625pF @ 10V |
| Power Dissipation (Max) | 450mW |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TPC8213-H(TE12LQ,M by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 50mOhm @ 2.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TPC8213-H(TE12LQ,M
Alternatives & Replacements
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FW813-TL-H
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SMALL SIGNAL N AND P-CH MOSFET
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 450mW |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 625pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
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