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Toshiba Semiconductor and Storage8-SOIC (0.173", 4.40mm Width)RoHS

TPC8211(TE12L,Q,M)

MOSFET 2N-CH 30V 5.5A SOP8

TPC8211(TE12L,Q,M) by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Arrays

Package

8-SOIC (0.173", 4.40mm Width)

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelTPC8211(TE12L,Q,M)
Package / Case8-SOIC (0.173", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)36mOhm @ 3A, 10V
Vgs(th) (Max)2.5V @ 1mA
Gate Charge (Qg)25nC @ 10V
Input Capacitance (Ciss)1250pF @ 10V
Power Dissipation (Max)450mW
Supplier Device Package8-SOP (5.5x6.0)
RoHSRoHS
Part StatusObsolete

Application & Notes

TPC8211(TE12L,Q,M) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 36mOhm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max450mW
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs36mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds1250pF @ 10V
Current - Continuous Drain (Id) @ 25°C5.5A

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